Small Business Innovation Research · Small Business Technology Transfer
GPD Optoelectronics Corporation: SBIR & STTR awards
9 awards worth $2.39M to 1 companies since 2001 match these filters. Phase I tests an idea (usually a few hundred thousand dollars); Phase II builds it (often $1M or more).
GPD Optoelectronics Corporation's federal contracts and grants · All SBIR & STTR awards
Awards by year
| Year | Phase I | Phase II | Amount |
|---|---|---|---|
| 2009 | 1 | 0 | $99.9K |
| 2008 | 1 | 0 | $100.0K |
| 2005 | 0 | 1 | $747.6K |
| 2004 | 1 | 1 | $699.0K |
| 2003 | 1 | 0 | $70.0K |
| 2002 | 1 | 1 | $600.0K |
| 2001 | 1 | 0 | $70.0K |
The latest year fills in over months: agencies report awards to SBIR.gov with a lag.
By agency
- National Aeronautics and Space Administration 7 awards · $1.54M
- Department of Defense 2 awards · $846.5K
Latest matching awards
| Award | Company | Agency | Phase | Amount | Date |
|---|---|---|---|---|---|
| Motor Controller for Extreme Environments Based on SiGe · topic S3.03 | GPD Optoelectronics Corporation · New Hampshire | National Aeronautics and Space Administration | SBIR Phase I | $99.9K | 2009-01-22 |
| GaAs JFETs for Extremely Low-Noise, Deep Cryogenic Sensor Readout · topic S1.04 | GPD Optoelectronics Corporation · New Hampshire | National Aeronautics and Space Administration | SBIR Phase I | $100.0K | 2008-01-18 |
| Novel SiGe Devices for Cryogenic Power Electronics · topic ST041-002 | GPD Optoelectronics Corporation · New Hampshire | Department of Defense · Defense Advanced Research Projects Agency | STTR Phase II | $747.6K | 2005-09-30 |
| Novel SiGe Devices for Cryogenic Power Electronics · topic ST041-002 | GPD Optoelectronics Corporation · New Hampshire | Department of Defense · Defense Advanced Research Projects Agency | STTR Phase I | $99.0K | 2004-06-23 |
| SiGe Semiconductor Devices for High-Performance Cryogenic Power Electronics · topic S4.07 | GPD Optoelectronics Corporation · New Hampshire | National Aeronautics and Space Administration | SBIR Phase II | $600.0K | 2003-11-28 |
| SiGe Semiconductor Devices for High-Performance Cryogenic Power Electronics | GPD Optoelectronics Corporation · New Hampshire | National Aeronautics and Space Administration | SBIR Phase I | $70.0K | 2003 |
| Ge Semiconductor Devices for High-Performance Cryogenic Power Electronics | GPD Optoelectronics Corporation · New Hampshire | National Aeronautics and Space Administration | SBIR Phase II | $600.0K | 2002 |
| Ge Semiconductor Devices for High-Performance Cryogenic Power Electronics | GPD Optoelectronics Corporation · New Hampshire | National Aeronautics and Space Administration | SBIR Phase I | $0 | 2002 |
| Ge Semiconductor Devices for High-Performance Cryogenic Power Electronics | GPD Optoelectronics Corporation · New Hampshire | National Aeronautics and Space Administration | SBIR Phase I | $70.0K | 2001 |
Source: SBIR.gov award data (SBA) ↗, awards through 2026-08-28. Amounts are as agencies report them to SBA. SBIR/STTR contracts also appear in USAspending as ordinary awards; grants (NIH, NSF, DOE) appear as assistance. Open topics are posted by each agency; see Opportunities for contract notices.